Samsung 850 EVO 250GB Review & Specifications

Samsung 850 EVO 250GB 2.5'' SATA3 MZ-75E250B/AM

- Samsung

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Capacity: 250GB
Form Factor: 2.5 inch
Interface: SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
NAND Flash: 32 Layer 3D V-NAND
Thickness: 7.0 mm
Optimized performance for everyday computing needs
Sequential read speed 550 MB/s; Sequential write speed 520 MB/s; Random read speed 100K; Random write speed 90K
Energy efficient - improves battery life by up to 50 minutes vs. hard disk drives
Worry-free data security with AES 256-bit, TCG/Opal v.2 and Microsoft eDrive full-disk encryption
Backed by a five-year limited warranty

Specs Overview

Model MZ-75E250B/AM
Release Date December 2014
Capacity 250GB
Interface SATA 6 Gb/s
Form Factor 2.5"
SSD Controller Samsung MGX
NAND Flash Type 3D V-NAND

Pros

  • Samsung MGX controller
  • 3D V-NAND
  • Competitive pricing
  • Great performance

Cons

Score Pangoly

91

Samsung 850 EVO 250GB Performance comparison with similar Solid State Drives

Critic Reviews

100

W e pity the poor SSD makers who have to face off against Samsung. The Korean giant has dominated solid state storage since releasing the original 850 Pro back in July of last year, highlighting the benefits that come when every component is built...

PC Authority

Read the full review
80

Today's biggest-capacity consumer SSD, the 4TB version of the venerable 850 EVO packs the same speed and delivers the same strengths as Samsung's earlier models, but the price is quite dear. Read...

Computer Shopper

Read the full review
90

The Samsung 850 EVO 500GB is an extremely impressive SSD that provides class-leading technology and speeds to the market. Through our benchmark results, we found the drive to perform consistently well and above all its competitors. We wouldn't hesita ...

Usage Application Client PCs
Capacity 120GB, 250GB, 500GB, 1TB(1,000GB)
Dimension (W x H x D) 100 x 69.85 x 6.8 (mm)
Interface SATA 6Gb/s (compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form factor 2.5 inch
Controller 120/250/500GB : Samsung MGX controller
1TB: Samsung MEX controller
NAND Flash Memory Samsung 32 layer 3D V-NAND
DRAM Cache Memory 256MB (120GB) or 512MB(250GB&500GB) or 1GB (1TB) LPDDR2
Performance* Sequential Read Max. 540 MB/s
Sequential Write** Max. 520 MB/s
4KB Random Read (QD1) Max. 10,000 IOPS
4KB Random Write (QD1) Max. 40,000 IOPS
4KB Random Read (QD32) Max. 98,000 IOPS(500GB/1TB)
Max. 97,000 IOPS(250GB)
Max. 94,000 IOPS(120GB)
4KB Random Write (QD32) Max. 90,000 IOPS(500GB/1TB)
Max. 88,000 IOPS(120GB/250GB)
Data Security AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive(IEEE1667)
Weight Max. 66g (1TB)
Reliability MTBF: 1.5 million hours
TBW 120/250GB: 75TBW
500GB/1TB: 150 TBW
Power Consumption*** Active Read/Write (Average): Max. 3.7W(1TB) / Max. 4.4W(1TB)
Idle: Max. 50mW
Device Sleep: 2mW(120/250/500GB), 4mW(1TB)
Supporting features TRIM(Required OS support), Garbage Collection, S.M.A.R.T.
Temperature Operating: 0°C to 70°C
Non-Operating: -40°C to 85°C
Humidity 5% to 95%, non-condensing
Vibration Non-Operating: 20~2000Hz, 20G
Shock Non-Operating: 1500G, duration 0.5m sec, 3 axis
Warranty 5 Years Limited More Information >>
  • *    Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer 2010. Performance may vary based on SSD’s firmware version, system hardware & configuration. Test system configuration : Intel Core i7-4790K @ 4.0GHz, DDR3 1600MHz 8GB, OS – Windows7 Ultimate x64 SP1, IRST 13.0.3.1001, Chipset : Intel® Z97
  • **   Sequential Write performance measurements based on TurboWrite technology, The sequential write performances after TurboWrite region are 150MB/s(120GB), 300MB/s(250GB), 500MB/s(500GB) and 520MB/s(1TB).
  • *** Power consumption measured with IOmeter 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel®DH87RL OS- Windows7 Ultimate x64 SP1

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