Axiom 8GB DDR4-2666 SODIMM 3TQ35AA-AX RAM

Axiom 8GB DDR4-2666 SODIMM 3TQ35AA-AX

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Axiom 8GB DDR4-2666 SODIMM for HP - 3TQ35AA, 3TQ35AT CAS Latency: 19 Voltage: 1.20V Features: Axiom's DDR4 Modules use the latest evolutionary DRAM design, provides improved speed, power management and reliability. The release of DDR4 delivers an overall performance improvement of up to 30% for single DIMM configurations. DDR4 performance scales up to 65% faster in 3-DIMM per channel (3DPC) applications over DDR3. High bandwidth and faster data rates combined with lower voltage demands deliver the most compelling and significant DRAM computing update in the past decade.

Axiom 8GB DDR4-2666 SODIMM 3TQ35AA-AX image 1

Specifications Overview

Model	3TQ35AA-AX
Type	260-pin DDR4 SODIMM
Speed	DDR4-2666 MHz
Size	8GB (1 x 8GB)
CAS Latency	19
First Word Latency	14.25 ns
Voltage	1.2 V
Heat Spreader	No
ECC Support	No

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	2133	2400	2666	2800	2933	3000	3200	3300	3333	3400	3466	3600	3666	3733
13	12.19	10.83	9.75	9.29	8.86	8.67	8.13	7.88	7.80	7.65	7.50	7.22	7.09	6.96
14	13.13	11.67	10.50	10.00	9.55	9.33	8.75	8.48	8.40	8.24	8.08	7.78	7.64	7.50
15	14.06	12.50	11.25	10.71	10.23	10.00	9.38	9.09	9.00	8.82	8.66	8.33	8.18	8.04
16	15.00	13.33	12.00	11.43	10.91	10.67	10.00	9.70	9.60	9.41	9.23	8.89	8.73	8.57
17	15.94	14.17	12.75	12.14	11.59	11.33	10.63	10.30	10.20	10.00	9.81	9.44	9.27	9.11
18	16.88	15.00	13.50	12.86	12.27	12.00	11.25	10.91	10.80	10.59	10.39	10.00	9.82	9.64
19	17.82	15.83	14.25	13.57	12.96	12.67	11.88	11.52	11.40	11.18	10.96	10.56	10.37	10.18
20	18.75	16.67	15.00	14.29	13.64	13.33	12.50	12.12	12.00	11.76	11.54	11.11	10.91	10.72
21	19.69	17.50	15.75	15.00	14.32	14.00	13.13	12.73	12.60	12.35	12.12	11.67	11.46	11.25
22	20.63	18.33	16.50	15.71	15.00	14.67	13.75	13.33	13.20	12.94	12.69	12.22	12.00	11.79
23	21.57	19.17	17.25	16.43	15.68	15.33	14.38	13.94	13.80	13.53	13.27	12.78	12.55	12.32
24	22.50	20.00	18.00	17.14	16.37	16.00	15.00	14.55	14.40	14.12	13.85	13.33	13.09	12.86
25	23.44	20.83	18.75	17.86	17.05	16.67	15.63	15.15	15.00	14.71	14.43	13.89	13.64	13.39

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.