Crucial 8GB (2 x 4GB) DDR4 SODIMM 2666 RAM

Crucial 8GB (2 x 4GB) DDR4 SODIMM 2666 MT/s (PC4-21300) CL19 x8 260-Pin - CT2K4G4SFS8266

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Options (8)

	16GB Dual Rank 2400 MT/s Memory $84.38
	8GB Kit (4GBx2) Single Rank x8 2400 MT/s Memory $72.88
	16GB Kit (8GBx2) Single Rank 2400 MT/s Memory $109.99
	8GB Single Rank 2400 MT/s Memory $60.00
	32GB Kit (16GBx2) Dual Rank 2400 MT/s Memory $204.79
	4GB Single Rank 2400 MT/s Memory $41.92
	8GB Kit (4GBx2) Single Rank 2400 MT/s Memory $72.88
	4GB Single Rank x16 2400 MT/s Memory $41.82

Crucial 8GB Kit (4GBx2) DDR4 2666 MT/s (PC4-21300) CL19 x8 SODIMM 260-Pin Memory - CT2K4G4SFS8266 CAS Latency: 19 Voltage: 1.20V Buffered/Registered: Unbuffered Features: Speeds up to 3200 MT/s and faster data rates are expected to be available as DDR4 technology matures Increase bandwidth by up to 30% Reduce Power consumption by up to 40% and extend battery life Faster burst access speeds for improved sequential data throughput Optimized for next Generation Processors and Platforms

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Specifications Overview

Model	CT2K4G4SFS8266
Type	260-pin DDR4 SODIMM
Speed	DDR4-2666 MHz
Size	8GB (2 x 4GB)
CAS Latency	19
First Word Latency	14.25 ns
Voltage	1.2 V
Heat Spreader	No
ECC Support	No

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	2133	2400	2666	2800	2933	3000	3200	3300	3333	3400	3466	3600	3666	3733
13	12.19	10.83	9.75	9.29	8.86	8.67	8.13	7.88	7.80	7.65	7.50	7.22	7.09	6.96
14	13.13	11.67	10.50	10.00	9.55	9.33	8.75	8.48	8.40	8.24	8.08	7.78	7.64	7.50
15	14.06	12.50	11.25	10.71	10.23	10.00	9.38	9.09	9.00	8.82	8.66	8.33	8.18	8.04
16	15.00	13.33	12.00	11.43	10.91	10.67	10.00	9.70	9.60	9.41	9.23	8.89	8.73	8.57
17	15.94	14.17	12.75	12.14	11.59	11.33	10.63	10.30	10.20	10.00	9.81	9.44	9.27	9.11
18	16.88	15.00	13.50	12.86	12.27	12.00	11.25	10.91	10.80	10.59	10.39	10.00	9.82	9.64
19	17.82	15.83	14.25	13.57	12.96	12.67	11.88	11.52	11.40	11.18	10.96	10.56	10.37	10.18
20	18.75	16.67	15.00	14.29	13.64	13.33	12.50	12.12	12.00	11.76	11.54	11.11	10.91	10.72
21	19.69	17.50	15.75	15.00	14.32	14.00	13.13	12.73	12.60	12.35	12.12	11.67	11.46	11.25
22	20.63	18.33	16.50	15.71	15.00	14.67	13.75	13.33	13.20	12.94	12.69	12.22	12.00	11.79
23	21.57	19.17	17.25	16.43	15.68	15.33	14.38	13.94	13.80	13.53	13.27	12.78	12.55	12.32
24	22.50	20.00	18.00	17.14	16.37	16.00	15.00	14.55	14.40	14.12	13.85	13.33	13.09	12.86
25	23.44	20.83	18.75	17.86	17.05	16.67	15.63	15.15	15.00	14.71	14.43	13.89	13.64	13.39

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.