G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz RAM

Name: G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz
Brand: G.Skill
SKU: F4-2666C19D-16GIS
Rating: 4.0 (119 reviews)

G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz 288-Pin F4-2666C19D-16GIS

★★★★☆

(119 reviews)

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Brand G.SKILL Series Aegis Model F4-2666C19D-16GIS
Capacity16gb (2 X 8GB) Type288-Pin DDR4 SDRAM Speedddr4 2666 (PC4 21300)
CAS Latency Column Address Strobe (CAS) Latency, Or CL, Is The Delay Time Between The Moment A Memory Controller Tells The Memory Module To Access A Particular Memory Column On A RAM Module, And The Moment The Data From The Given Array Location Is Available On The Module's Output Pins. In General, The Lower The CL, The Better. 19 Timing19-19-19-43 Voltage1.2V Eccno
Buffered/Registered Buffered (Also Called Registered) Memory Module Has A Register Between The DRAM Module And The System’S Memory Controller. Buffered Memory Lessens The Electrical Load On The System’S Memory Controller, Allowing More Memory Modules To Be Used At One Time Than Would Otherwise Be Possible. Compared To Unbuffered Memory, Buffered Memory Is More Stable But Also More Expensive. And Buffered Memory Is Mainly Used In Servers And Workstations. Almost All Registered Memory Is ECC (Err

G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz image 1

G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz image 2

G.SKILL Aegis 16GB (2 x 8GB) DDR4 2666MHz image 3

Specifications Overview

Model	F4-2666C19D-16GIS
Type	288-pin DDR4 DIMM
Speed	DDR4-2666 MHz
Size	16GB (2 x 8GB)
CAS Latency	19
Timing	19-19-19-43
First Word Latency	14.25 ns
Voltage	1.2 V
Heat Spreader	No
ECC Support	No
Color	Black/Red

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	2133	2400	2666	2800	2933	3000	3200	3300	3333	3400	3466	3600	3666	3733
13	12.19	10.83	9.75	9.29	8.86	8.67	8.13	7.88	7.80	7.65	7.50	7.22	7.09	6.96
14	13.13	11.67	10.50	10.00	9.55	9.33	8.75	8.48	8.40	8.24	8.08	7.78	7.64	7.50
15	14.06	12.50	11.25	10.71	10.23	10.00	9.38	9.09	9.00	8.82	8.66	8.33	8.18	8.04
16	15.00	13.33	12.00	11.43	10.91	10.67	10.00	9.70	9.60	9.41	9.23	8.89	8.73	8.57
17	15.94	14.17	12.75	12.14	11.59	11.33	10.63	10.30	10.20	10.00	9.81	9.44	9.27	9.11
18	16.88	15.00	13.50	12.86	12.27	12.00	11.25	10.91	10.80	10.59	10.39	10.00	9.82	9.64
19	17.82	15.83	14.25	13.57	12.96	12.67	11.88	11.52	11.40	11.18	10.96	10.56	10.37	10.18
20	18.75	16.67	15.00	14.29	13.64	13.33	12.50	12.12	12.00	11.76	11.54	11.11	10.91	10.72
21	19.69	17.50	15.75	15.00	14.32	14.00	13.13	12.73	12.60	12.35	12.12	11.67	11.46	11.25
22	20.63	18.33	16.50	15.71	15.00	14.67	13.75	13.33	13.20	12.94	12.69	12.22	12.00	11.79
23	21.57	19.17	17.25	16.43	15.68	15.33	14.38	13.94	13.80	13.53	13.27	12.78	12.55	12.32
24	22.50	20.00	18.00	17.14	16.37	16.00	15.00	14.55	14.40	14.12	13.85	13.33	13.09	12.86
25	23.44	20.83	18.75	17.86	17.05	16.67	15.63	15.15	15.00	14.71	14.43	13.89	13.64	13.39

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.