GIGABYTE 512GB GP-GSM2NE3512GNTD

GIGABYTE M.2 2280 512GB PCI-Express 3.0 x4, NVMe 1.3 GP-GSM2NE3512GNTD

GIGABYTE M.2 2280 512GB PCI-Express 3.0 x4, NVMe 1.3 GP-GSM2NE3512GNTD

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  • GIGABYTE M.2 2280 512GB PCI-Express 3.0 x4, NVMe 1.3 Internal Solid State Drive (SSD) GP-GSM2NE3512GNTD Max Sequential Read: Up to 1700 MBps Max Sequential Write: Up to 1550 MBps 4KB Random Read: Up to 270,000 IOPS 4KB Random Write: Up to 340,000 IOPS Power Consumption (Active): Avg. read: 3.3W; Write: 2.8W Power Consumption (Idle): 1.8 mW Used For: Consumer MTBF: 1,500,000 hours

Specifications Overview

Model GP-GSM2NE3512GNTD
Release Date January 2021

* First availability for purchase, it may not correspond to the actual market launch date.

Capacity 512 GB
Interface PCIe Gen3 x4
NVME Yes
Form Factor M.2-2280
Max Sequential Read Up to 1700 MB/s
Max Sequential Write Up to 1550 MB/s
MTBF 1,500,000 hours


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