Kingston 16GB SO-DIMM DDR4 3200MHZ

Kingston 16GB SO-DIMM DDR4 3200MHZ CL22 KVR32S22S8/16

Kingston 16GB SO-DIMM DDR4 3200MHZ CL22 KVR32S22S8/16

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  • 16GB 3200MHZ DDR4 NONECC CL22 CAS Latency: 22 Timing: 22-22-22 Voltage: 1.20V Features: Power Supply: VDD = 1.2V Typical VDDQ = 1.2V Typical VPP = 2.5V Typical VDDSPD = 2.2V to 3.6V Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Low-power auto self refresh (LPASR) Data bus inversion (DBI) for data bus On-die VREFDQ generation and calibration Single-rank On-board I2 serial presence-detect (SPD) EEPROM 16 internal banks; 4 groups of 4 banks each Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Fly-by topology Terminated control command and address bus PCB: Height 1.18' (30.00mm) RoHS Compliant and Halogen-Free

Specifications Overview

Model KVR32S22S8/16
Release Date April 2022

* First availability for purchase, it may not correspond to the actual market launch date.

Type 260-pin DDR4 SODIMM
Speed DDR4-3200 MHz
Size 16GB (1 x 16GB)
CAS Latency 22
Timing 22-22-22
First Word Latency 13.75 ns
Voltage 1.2 V
Heat Spreader No
ECC Support No

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

2133 2400 2666 2800 2933 3000 3200 3300 3333 3400 3466 3600 3666 3733
13 12.19 10.83 9.75 9.29 8.86 8.67 8.13 7.88 7.80 7.65 7.50 7.22 7.09 6.96
14 13.13 11.67 10.50 10.00 9.55 9.33 8.75 8.48 8.40 8.24 8.08 7.78 7.64 7.50
15 14.06 12.50 11.25 10.71 10.23 10.00 9.38 9.09 9.00 8.82 8.66 8.33 8.18 8.04
16 15.00 13.33 12.00 11.43 10.91 10.67 10.00 9.70 9.60 9.41 9.23 8.89 8.73 8.57
17 15.94 14.17 12.75 12.14 11.59 11.33 10.63 10.30 10.20 10.00 9.81 9.44 9.27 9.11
18 16.88 15.00 13.50 12.86 12.27 12.00 11.25 10.91 10.80 10.59 10.39 10.00 9.82 9.64
19 17.82 15.83 14.25 13.57 12.96 12.67 11.88 11.52 11.40 11.18 10.96 10.56 10.37 10.18
20 18.75 16.67 15.00 14.29 13.64 13.33 12.50 12.12 12.00 11.76 11.54 11.11 10.91 10.72
21 19.69 17.50 15.75 15.00 14.32 14.00 13.13 12.73 12.60 12.35 12.12 11.67 11.46 11.25
22 20.63 18.33 16.50 15.71 15.00 14.67 13.75 13.33 13.20 12.94 12.69 12.22 12.00 11.79
23 21.57 19.17 17.25 16.43 15.68 15.33 14.38 13.94 13.80 13.53 13.27 12.78 12.55 12.32
24 22.50 20.00 18.00 17.14 16.37 16.00 15.00 14.55 14.40 14.12 13.85 13.33 13.09 12.86
25 23.44 20.83 18.75 17.86 17.05 16.67 15.63 15.15 15.00 14.71 14.43 13.89 13.64 13.39
CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.

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-0.42ns Latency

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