Kingston 2GB 204-Pin DDR3 SO-DIMM 1600 RAM

Name: Kingston 2GB 204-Pin DDR3 SO-DIMM 1600
Brand: Kingston
SKU: KVR16S11S6/2
Rating: 3.0 (4 reviews)

Kingston 2GB 204-Pin DDR3 SO-DIMM 1600 (PC3 12800) KVR16S11S6/2

★★★☆☆

(4 reviews)

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Kingston 2GB 204-Pin DDR3 SO-DIMM DDR3 1600 (PC3 12800) Laptop Memory Model KVR16S11S6/2 CAS Latency: 11 Voltage: 1.50V Features: JEDEC standard 1.5V (1.425V ~1.575V) Power Supply VDDQ = 1.5V (1.425V ~ 1.575V) 800MHz fCK for 1600Mb/sec/pin 8 independent internal bank Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5 Programmable Additive Latency: 0, CL - 2, or CL - 1 clock 8-bit pre-fetch Burst Length: 8 (Interleave without any limit, sequential with starting address '000' only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS] Bi-directional Differential Data Strobe Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm +/- 1%) On Die Termination using ODT pin Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C Asynchronous Reset PCB : Height 1.180' (30.00mm), single sided component

Kingston 2GB 204-Pin DDR3 SO-DIMM 1600 image 1

Kingston 2GB 204-Pin DDR3 SO-DIMM 1600 image 2

Kingston 2GB 204-Pin DDR3 SO-DIMM 1600 image 3

Specifications Overview

Model	KVR16S11S6/2
Type	204-pin DDR3 SODIMM
Speed	DDR3-1600 MHz
Size	2GB (1 x 2GB)
CAS Latency	11
First Word Latency	13.75 ns
Voltage	1.5 V
Heat Spreader	No
ECC Support	No

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	1066	1333	1600	1866	2000	2133	2400	2666	2800	2933	3000	3100	3200
7	13.13	10.50	8.75	7.50	7.00	6.56	5.83	5.25	5.00	4.77	4.67	4.52	4.38
8	15.01	12.00	10.00	8.57	8.00	7.50	6.67	6.00	5.71	5.46	5.33	5.16	5.00
9	16.89	13.50	11.25	9.65	9.00	8.44	7.50	6.75	6.43	6.14	6.00	5.81	5.63
10	18.76	15.00	12.50	10.72	10.00	9.38	8.33	7.50	7.14	6.82	6.67	6.45	6.25
11	20.64	16.50	13.75	11.79	11.00	10.31	9.17	8.25	7.86	7.50	7.33	7.10	6.88
12	22.51	18.00	15.00	12.86	12.00	11.25	10.00	9.00	8.57	8.18	8.00	7.74	7.50
13	24.39	19.50	16.25	13.93	13.00	12.19	10.83	9.75	9.29	8.86	8.67	8.39	8.13
14	26.27	21.01	17.50	15.01	14.00	13.13	11.67	10.50	10.00	9.55	9.33	9.03	8.75
15	28.14	22.51	18.75	16.08	15.00	14.06	12.50	11.25	10.71	10.23	10.00	9.68	9.38
16	30.02	24.01	20.00	17.15	16.00	15.00	13.33	12.00	11.43	10.91	10.67	10.32	10.00
17	31.89	25.51	21.25	18.22	17.00	15.94	14.17	12.75	12.14	11.59	11.33	10.97	10.63
18	33.77	27.01	22.50	19.29	18.00	16.88	15.00	13.50	12.86	12.27	12.00	11.61	11.25
19	35.65	28.51	23.75	20.36	19.00	17.82	15.83	14.25	13.57	12.96	12.67	12.26	11.88

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.