Kingston HyperX Plug and Play 4GB (2x2GB) 1600MHz DDR3 RAM

Name: Kingston HyperX Plug and Play 4GB (2x2GB) 1600MHz DDR3
Brand: Kingston
SKU: KHX1600C9D3P1K2/4G
Rating: 5.0 (2 reviews)

Kingston HyperX Plug and Play 4GB (2x2GB) 1600MHz DDR3 CL9 KHX1600C9D3P1K2/4G

★★★★★

(2 reviews)

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Kingston's KHX1600C9D3P1K2/4G is a kit of two 256M x 64-bit
(2GB) DDR3-1600 CL9 SDRAM (Synchronous DRAM) 1Rx8
memory modules, based on eight 256M x 8-bit DDR3 FBGA
components per module. Total kit capacity is 4GB. Each
module kit has been tested to run at JEDEC DDR3-1600 at a
low latency timing of 9-9-9 at 1.5V. Additional timing parameters
are shown in the PnP Timing Parameters section. Each
240-pin DIMM uses gold contact fingers and requires +1.5V.

Kingston HyperX Plug and Play 4GB (2x2GB) 1600MHz DDR3 image 1

Specifications Overview

Model	KHX1600C9D3P1K2/4G
Release Date	June 2011 * First availability for purchase, it may not correspond to the actual market launch date.
Type	240-pin DDR3 DIMM
Speed	DDR3-1600 MHz
Size	4GB (2 x 2GB)
CAS Latency	9
First Word Latency	11.25 ns
Voltage	1.5 V
Heat Spreader	Yes
ECC Support	No

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

Pros

Low profile
Lifetime warranty

Cons

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	1066	1333	1600	1866	2000	2133	2400	2666	2800	2933	3000	3100	3200
7	13.13	10.50	8.75	7.50	7.00	6.56	5.83	5.25	5.00	4.77	4.67	4.52	4.38
8	15.01	12.00	10.00	8.57	8.00	7.50	6.67	6.00	5.71	5.46	5.33	5.16	5.00
9	16.89	13.50	11.25	9.65	9.00	8.44	7.50	6.75	6.43	6.14	6.00	5.81	5.63
10	18.76	15.00	12.50	10.72	10.00	9.38	8.33	7.50	7.14	6.82	6.67	6.45	6.25
11	20.64	16.50	13.75	11.79	11.00	10.31	9.17	8.25	7.86	7.50	7.33	7.10	6.88
12	22.51	18.00	15.00	12.86	12.00	11.25	10.00	9.00	8.57	8.18	8.00	7.74	7.50
13	24.39	19.50	16.25	13.93	13.00	12.19	10.83	9.75	9.29	8.86	8.67	8.39	8.13
14	26.27	21.01	17.50	15.01	14.00	13.13	11.67	10.50	10.00	9.55	9.33	9.03	8.75
15	28.14	22.51	18.75	16.08	15.00	14.06	12.50	11.25	10.71	10.23	10.00	9.68	9.38
16	30.02	24.01	20.00	17.15	16.00	15.00	13.33	12.00	11.43	10.91	10.67	10.32	10.00
17	31.89	25.51	21.25	18.22	17.00	15.94	14.17	12.75	12.14	11.59	11.33	10.97	10.63
18	33.77	27.01	22.50	19.29	18.00	16.88	15.00	13.50	12.86	12.27	12.00	11.61	11.25
19	35.65	28.51	23.75	20.36	19.00	17.82	15.83	14.25	13.57	12.96	12.67	12.26	11.88

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.

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Description

SPECIFICATIONS

CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 33.75ns (min.)
Power (Operating) TBD* (per module)
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.

FEATURES

• JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
• VDDQ = 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
• Posted CAS
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 8 (DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB : Height 1.180” (30.00mm), single sided component