Patriot Signature Line 32GB DDR4 2666 RAM

Patriot Signature Line 32GB DDR4 2666 (PC4 21300) PSD432G26662

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Patriot Signature Line 32GB 288-Pin DDR4 SDRAM DDR4 2666 (PC4 21300) Desktop Memory Model PSD432G26662 CAS Latency: 19 Voltage: 1.20V Timing: 19-19-19-43 Buffered/Registered: Unbuffered Color: Black Features: Patriot's Signature Line DDR4 Non-ECC unbuffered memory delivers the quality, reliability and performance expected for today's mainstream computer needs. 32GB is designed to run at PC4-21300 (2666MHz) at CAS 19 latency timings for better overall system responsiveness when using demanding application. Built using the highest quality components and hand tested, Patriot ensures every module meets and exceeds industry standards to offer you a hassle-free plug-and-play memory upgrade.

Patriot Signature Line 32GB DDR4 2666 image 1

Patriot Signature Line 32GB DDR4 2666 image 2

Patriot Signature Line 32GB DDR4 2666 image 3

Patriot Signature Line 32GB DDR4 2666 image 4

Specifications Overview

Model	PSD432G26662
Release Date	June 2020 * First availability for purchase, it may not correspond to the actual market launch date.
Type	288-pin DDR4 DIMM
Speed	DDR4-2666 MHz
Size	32GB (1 x 32GB)
CAS Latency	19
Timing	19-19-19-43
First Word Latency	14.25 ns
Voltage	1.2 V
Heat Spreader	No
ECC Support	No
Color	Black

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	2133	2400	2666	2800	2933	3000	3200	3300	3333	3400	3466	3600	3666	3733
13	12.19	10.83	9.75	9.29	8.86	8.67	8.13	7.88	7.80	7.65	7.50	7.22	7.09	6.96
14	13.13	11.67	10.50	10.00	9.55	9.33	8.75	8.48	8.40	8.24	8.08	7.78	7.64	7.50
15	14.06	12.50	11.25	10.71	10.23	10.00	9.38	9.09	9.00	8.82	8.66	8.33	8.18	8.04
16	15.00	13.33	12.00	11.43	10.91	10.67	10.00	9.70	9.60	9.41	9.23	8.89	8.73	8.57
17	15.94	14.17	12.75	12.14	11.59	11.33	10.63	10.30	10.20	10.00	9.81	9.44	9.27	9.11
18	16.88	15.00	13.50	12.86	12.27	12.00	11.25	10.91	10.80	10.59	10.39	10.00	9.82	9.64
19	17.82	15.83	14.25	13.57	12.96	12.67	11.88	11.52	11.40	11.18	10.96	10.56	10.37	10.18
20	18.75	16.67	15.00	14.29	13.64	13.33	12.50	12.12	12.00	11.76	11.54	11.11	10.91	10.72
21	19.69	17.50	15.75	15.00	14.32	14.00	13.13	12.73	12.60	12.35	12.12	11.67	11.46	11.25
22	20.63	18.33	16.50	15.71	15.00	14.67	13.75	13.33	13.20	12.94	12.69	12.22	12.00	11.79
23	21.57	19.17	17.25	16.43	15.68	15.33	14.38	13.94	13.80	13.53	13.27	12.78	12.55	12.32
24	22.50	20.00	18.00	17.14	16.37	16.00	15.00	14.55	14.40	14.12	13.85	13.33	13.09	12.86
25	23.44	20.83	18.75	17.86	17.05	16.67	15.63	15.15	15.00	14.71	14.43	13.89	13.64	13.39

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.