Samsung 16GB DDR4-2133 ECC REG RAM

Samsung 16GB DDR4-2133 2Gx72 ECC REG CL15 Server Memory (M393A2G40DB0-CPB0)

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Samsung DDR4 Registered DIMMs (or RDIMMs) are designed with an additional hardware register between the DRAM module and the system’s memory controller
RDIMMs are often the default choice for deployment in server-class computing systems.
Samsung DDR4 memory is available as Registered DIMM that it provides an optimized solution for highly virtualized environments, high-performance computing and networking
Semiconductor modules of Samsung DDR4 are designed with new system circuit architecture to deliver higher performance with low power requirements
Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improves performance and optimizes the total cost of ownership.

Specifications Overview

Model	M393A2G40DB0-CPB M393A2G40DB0-CPB0
Type	288-pin DDR4 DIMM
Speed	DDR4-2133 MHz
Size	16GB (1 x 16GB)
CAS Latency	15
First Word Latency	14.06 ns
Voltage	1.2 V
Heat Spreader	No
ECC Support	Yes

	Old Name	Current Name	Branding	Data Speed	Port
USB 2.0	USB 2.0	USB 2.0	Hi-Speed USB	480 Mbit/s	diverse
USB 3.0	USB 3.1 Gen 1	USB 3.2 Gen 1x1	SuperSpeed USB	5 Gbit/s	diverse
USB 3.1	USB 3.1 Gen 2	USB 3.2 Gen 2x1	SuperSpeed USB 10Gbps	10 Gbit/s	diverse
USB 3.2	USB 3.2 Gen 2x2	USB 4.0 Gen 2x2	USB4 20Gbps	20 Gbit/s	only USB-C
USB4	USB 4.0 Gen 3x2	USB4 1.0	USB4 40Gbps	40 Gbit/s	only USB-C
USB4v2	USB 4.0 Gen 4	USB4 2.0	USB4 80Gbps	80-120 Gbit/s	only USB-C

RAM First Word Latency Table (nanoseconds)

Latency is measured in nanoseconds, which is a combination of frequency and CAS. Both frequency increases and latency decreases result in better system performance (when latency is the same, always prefer higher frequency if possible).

Frequency (MT/s)

	2133	2400	2666	2800	2933	3000	3200	3300	3333	3400	3466	3600	3666	3733
13	12.19	10.83	9.75	9.29	8.86	8.67	8.13	7.88	7.80	7.65	7.50	7.22	7.09	6.96
14	13.13	11.67	10.50	10.00	9.55	9.33	8.75	8.48	8.40	8.24	8.08	7.78	7.64	7.50
15	14.06	12.50	11.25	10.71	10.23	10.00	9.38	9.09	9.00	8.82	8.66	8.33	8.18	8.04
16	15.00	13.33	12.00	11.43	10.91	10.67	10.00	9.70	9.60	9.41	9.23	8.89	8.73	8.57
17	15.94	14.17	12.75	12.14	11.59	11.33	10.63	10.30	10.20	10.00	9.81	9.44	9.27	9.11
18	16.88	15.00	13.50	12.86	12.27	12.00	11.25	10.91	10.80	10.59	10.39	10.00	9.82	9.64
19	17.82	15.83	14.25	13.57	12.96	12.67	11.88	11.52	11.40	11.18	10.96	10.56	10.37	10.18
20	18.75	16.67	15.00	14.29	13.64	13.33	12.50	12.12	12.00	11.76	11.54	11.11	10.91	10.72
21	19.69	17.50	15.75	15.00	14.32	14.00	13.13	12.73	12.60	12.35	12.12	11.67	11.46	11.25
22	20.63	18.33	16.50	15.71	15.00	14.67	13.75	13.33	13.20	12.94	12.69	12.22	12.00	11.79
23	21.57	19.17	17.25	16.43	15.68	15.33	14.38	13.94	13.80	13.53	13.27	12.78	12.55	12.32
24	22.50	20.00	18.00	17.14	16.37	16.00	15.00	14.55	14.40	14.12	13.85	13.33	13.09	12.86
25	23.44	20.83	18.75	17.86	17.05	16.67	15.63	15.15	15.00	14.71	14.43	13.89	13.64	13.39

CAS (clock cycles) Lower latency means faster memory.

Distribution of First Word Latencies for Similar RAM Modules

The histogram below shows the distribution of first word latencies (in nanoseconds) for all RAM modules of the same DDR type and frequency in our database. Each bar represents the number of modules that fall within a specific latency range. The highlighted bar indicates the latency of the currently selected RAM module.