Samsung 850 EVO 500GB M.2 MZ-N5E500BW

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Samsung 850 EVO 500GB - M.2 SATA (MZ-N5E500BW)

Samsung 850 EVO 500GB - M.2 SATA (MZ-N5E500BW)

★★★★☆
(251 recensioni)
Venditore Prezzo Compra
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  • SSD con tecnologia V-NAND Samsung
  • Fattore di forma M.2
  • Interfaccia SATA 6 Gb/s, compatibile con SATA 3 Gb/s e SATA 1,5 Gb/s
  • Velocità di Lettura Sequenziale fino a 540 MB/sec e velocità di scrittura sequenziale fino a 520 MB/sec
  • Lettura casuale fino a 98000 IOPS e scrittura casuale fino a 90000 IOPS

Scheda tecnica

Modello MZ-N5E500BW
Disponibile da Febbraio 2015

* Prima data di disponibilità per l'acquisto, potrebbe non necessariamente corrispondere a quando il prodotto è stato lanciato sul mercato.

Serie 850 EVO
Capacità 500 GB
Interfaccia SATA 6 Gb/s
NVME No
Formato M.2-2280
Controller SSD Samsung MGX
Tipo NAND Flash 3D NAND
Velocità massima lettura sequenziale Fino a 540 MB/s
Velocità massima scrittura sequenziale Fino a 500 MB/s
MTBF 1,500,000 ore

Descrizione

TypeApplicationStorageKey FeaturesGeneralEnvironmental SpecsForm FactorDimensions (W x D x H)WeightSoftwareWarranty

  • Product Type

    M.2

    Interface

    SATA 6Gb/s Interface, compatible with SATA 3Gb/s & SATA 1.5Gb/s interface

  • Consumer

    Yes

  • Capacity

    500 GB* *Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)

  • Sequential Read Speed

    Up to 540 MB/s Sequential Read * *Performance may vary based on system hardware & configuration

    Sequential Write Speed

    Up to 500 MB/s Sequential Write * *Performance may vary based on system hardware & configuration

    Random Read Speed

    Random Read (4KB, QD32): Up to 97,000 IOPS Random Read * Performance may vary based on system hardware & configurationRandom Read (4KB, QD1): Up to 10,000 IOPS Random Read * Performance may vary based on system hardware & configuration

    Random Write Speed

    Random Write (4KB, QD32): Up to 89,000 IOPS Random Write * *Performance may vary based on system hardware & configurationRandom Write (4KB, QD1): Up to 40,000 IOPS Random Write * Performance may vary based on system hardware & configuration

    Memory Speed

    Samsung 48L 3D V-NAND
    512MB LPDDR3

    Controller

    Samsung MGX Controller

    Trim Support

    Yes

    AES Encryption

    AES 256 bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)

    S.M.A.R.T. Support

    Yes

    GC (Garbage Collection)

    Auto Garbage Collection Algorithm

    WWN Support

    World Wide Name supported

    Device Sleep Mode Support

    Yes

    Internal Storage

    Yes

    Temperature proof

    Yes

  • Power Consumption (W)

    50 MW * Actual power consumption may vary depending on system hardware & configurationAverage: 3.5 W *Maximum: 4.7 W (Burst mode) * Actual power consumption may vary depending on system hardware & configuration

    Voltage

    3V ± 5% Allowable voltage

    Reliability (MTBF)

    1.5 Million Hours Reliability (MTBF)

  • Operating Temperature

    32ºF - 158ºF

    Shock

    1500G & 0.5ms (Half sine)

  • Product

    SATA M.2

  • Product

    3.16" x 0.87" x 0.06"

  • Product

    0.28

  • Management SW

    Magician Software

  • Product

    5 Years Limited Warranty or 150TBW Limited Warranty



Recensioni tecniche

95

Samsung 850 EVO M.2 SSD Review. Today we examine the 850 EVO M.2, we did look at the 840 a fair while back now, so it'll be interesting to see whats changed. M.2 is the successor of the now retiring mSATA interface. The real strength of the tech is the...

90

Samsungs 2TB 850 Evo offers the maximum capacity with minimum price per GB, with performance nearly equal to the significantly more expensive 850...

100

Samsung dominate the information storage and DDR memory markets and for good reason – they been at the leading edge of memory development for years and I suspect it will continue that way for many years to come.Samsung's EVO 850 Series solid state drive...

performancepsu.com

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